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9272006U1000 - 20 AWG stranded (7x28) .038 tinned copper conductors, polyethylene insulation

9272006U1000_8485568.PDF Datasheet


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9272006U1000 9272006100 9272006U500 20 AWG stranded (7x28) .038 tinned copper conductors, polyethylene insulation
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APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Microsemi, Corp.
ADPOW[Advanced Power Technology]
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